4N5 Refined Indium

Produced via a four-step process of acid leaching, impurity removal, displacement reaction, and electrolytic refining, 4N5 refined indium reaches 99.995% purity with impurities such as Sn, Tl, and Cd consistently controlled below 10 ppm. Existing capacity is 120 t/year in ingot/bar form, serving as a key base material for ITO targets, semiconductor feedstock, and 7N ultra-high-purity indium.